In this paper, we study three cases of gradual degradataion modes of laser diodes including (1) Pattern-A that is associated with threshold current change only, (2) Pattern-B that involve both threshold current and power changes, and (3) Pattern-C that is associated with merely. In this paper, we study three cases of gradual degradataion modes of laser diodes including (1) Pattern-A that is associated with threshold current change only, (2) Pattern-B that involve both threshold current and power changes, and (3) Pattern-C that is associated with merely. The degradation of laser diodes is a severe problem for the laser makers, but it is also a very relevant defect physics problem as it involves optical, mechanical and thermal issues. We present herein a description of the main defects associated with the laser degradation, but also the principles. Semiconductor laser diodes are important components for various applications such as 5G wireless, datacenter, passive optical network, and aerospace applications. High reliability has emerged to be the universal requirement for all optical applications. Here, absorption and temperature build up in a positive feedback loop that eventually leads to material destruction. Thus, this is truly an ultimate. Degradation analysis is a crucial issue for the improvement of high power laser diodes. Degradation occurs in three different modes: rapid, gradual and catastrophic. The epitaxial layers were deposited on a (100) n-doped GaAs wafer in a MOCVD reactor.